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Power Mosfet IPB65R310CFDA TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB65R310CFDAATMA1
    Other # IPB65R310CFDA
    Mfr. Infineon
    Oneyac # A-IPB65R310CFDAATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Current at 25°C-Continuous Drain (Id) 11.4A(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 4.5V @ 440uA
    Power dissipation (maximum) 104.2W(Tc)
    On resistance at different Id and Vgs (maximum) 310 milliohm @ 4.4a, 10V
    fet type n channel
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Gate charge at different VGS (QG) (maximum) 41nC @ 10V
    Operating temperature -40°C ~ 150°C(TJ)
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 650V
    Input capacitance (Ciss) (maximum) at different Vds 1110pF @ 100V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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