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Power Mosfet IPB144N12N3 G TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB144N12N3GATMA1
    Other # IPB144N12N3 G
    Mfr. Infineon
    Oneyac # A-IPB144N12N3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    On resistance at different Id and Vgs (maximum) 14.4 milliohm @ 56a, 10V
    Vgs(th) (maximum) when different Id 4V @ 61uA
    Power dissipation (maximum) 107W(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 3220pF @ 60V
    Current at 25°C-Continuous Drain (Id) 56A(Ta)
    Drain-Source Voltage (Vdss) 120V
    technology MOSFET (metal oxide)
    fet type n channel
    Gate charge at different VGS (QG) (maximum) 49nC @ 10V
    Vgs(Max) ±20V
    Operating temperature -55°C ~ 175°C(TJ)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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