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Power Mosfet IPB123N10N3 G TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB123N10N3GATMA1
    Other # IPB123N10N3 G
    Mfr. Infineon
    Oneyac # A-IPB123N10N3GATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB Operating temperature : -55°C ~ 175°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(Max) ±20V
    Input capacitance (Ciss) (maximum) at different Vds 2500pF @ 50V
    technology MOSFET (metal oxide)
    Operating temperature -55°C ~ 175°C(TJ)
    Current at 25°C-Continuous Drain (Id) 58A(Tc)
    Power dissipation (maximum) 94W(Tc)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Drain-Source Voltage (Vdss) 100V
    On resistance at different Id and Vgs (maximum) 12.3 milliohm @ 46a, 10V
    Gate charge at different VGS (QG) (maximum) 35nC @ 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
    fet type n channel
    Vgs(th) (maximum) when different Id 3.5V @ 46uA
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