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Power Mosfet D2PAK

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    MPN IRFS4610TRLPBF
    Mfr. Infineon
    Oneyac # A-IRFS4610TRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Package/Enclosure D2PAK
    Gate Charge (Qg) at Different Vgs (Maximum) 140nC @ 10V
    Pd-power dissipation (Max) 190W(Tc)
    Drain-source voltage Vds 100V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum) 3550pF
    Rds On(Max)@Id,Vgs 14mΩ@44A,10V
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Voltage, coupled to gate charge (Qg) (max) @ Vgs 10V
    Continuous Drain Current Id 73A
    Vgs (th) (maximum) at different Ids 4V @ 100µA
    Gate Charge (Qg) at Different Vgs (Maximum) 140nC
    Input capacitance (Ciss) at different Vds (maximum) 3550pF @ 50V
    Vgs (th) (maximum) at different Ids 4V @ 100µA
    Series HEXFET®
    Voltage, coupled to input capacitance (Ciss) (max) @ Vds 50V
    fet type N-Channel
    Operating temperature -55°C~175°C(TJ)
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