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Power Mosfet IPB120N06S4-H1 TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB120N06S4H1ATMA2
    Other # IPB120N06S4-H1
    Mfr. Infineon
    Oneyac # A-IPB120N06S4H1ATMA2
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(Max) ±20V
    Current at 25°C-Continuous Drain (Id) 120A(Tc)
    fet type n channel
    On resistance at different Id and Vgs (maximum) 2.4 milliohm @ 100A, 10V
    Operating temperature -55°C ~ 175°C(TJ)
    Power dissipation (maximum) 250W(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 21900pF @ 25V
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 60V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Gate charge at different VGS (QG) (maximum) 270nC @ 10V
    Vgs(th) (maximum) when different Id 4V @ 200uA
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