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Power Mosfet IPB049NE7N3 G TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB049NE7N3GATMA1
    Other # IPB049NE7N3 G
    Mfr. Infineon
    Oneyac # A-IPB049NE7N3GATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB Operating temperature : -55°C ~ 175°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 3.8V @ 91uA
    Current at 25°C-Continuous Drain (Id) 80A(Tc)
    Operating temperature -55°C ~ 175°C(TJ)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Input capacitance (Ciss) (maximum) at different Vds 4750pF @ 37.5V
    On resistance at different Id and Vgs (maximum) 4.9 milliohm @ 80A, 10V
    technology MOSFET (metal oxide)
    Power dissipation (maximum) 150W(Tc)
    Drain-Source Voltage (Vdss) 75V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    fet type n channel
    Gate charge at different VGS (QG) (maximum) 68nC @ 10V
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