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Power Mosfet TO-220-3 whole package

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    MPN IPA65R110CFDXKSA2
    Mfr. Infineon
    Oneyac # A-IPA65R110CFDXKSA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate charge at different VGS (QG) (maximum) 118nC @ 10V
    Input capacitance (Ciss) (maximum) at different Vds 3240pF @ 100V
    Drain-Source Voltage (Vdss) 650V
    Operating temperature -55°C ~ 150°C(TJ)
    Package/Enclosure TO-220-3 whole package
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    fet type n channel
    Power dissipation (maximum) 34.7W(Tc)
    technology MOSFET (metal oxide)
    On resistance at different Id and Vgs (maximum) 110 milliohm @ 12.7a, 10V
    Current at 25°C-Continuous Drain (Id) 31.2A(Tc)
    Vgs(th) (maximum) when different Id 4.5V @ 1.3mA
    Vgs(Max) ±20V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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