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Power Mosfet IPA60R600P7S TO-220-3 whole package

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    MPN IPA60R600P7SXKSA1
    Other # IPA60R600P7S
    Mfr. Infineon
    Oneyac # A-IPA60R600P7SXKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Operating temperature -40°C ~ 150°C(TJ)
    Drain-Source Voltage (Vdss) 600V
    On resistance at different Id and Vgs (maximum) 600 milliohm @ 1.7A, 10V
    Vgs(Max) ±20V
    Package/Enclosure TO-220-3 whole package
    Input capacitance (Ciss) (maximum) at different Vds 363pF @ 400V
    fet type n channel
    Vgs(th) (maximum) when different Id 4V @ 80uA
    Current at 25°C-Continuous Drain (Id) 6A(Tc)
    Power dissipation (maximum) 21W(Tc)
    Gate charge at different VGS (QG) (maximum) 9nC @ 10V
    technology MOSFET (metal oxide)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
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