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Power Mosfet IPA65R190C7 TO-220-3 whole package

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    MPN IPA65R190C7XKSA1
    Other # IPA65R190C7
    Mfr. Infineon
    Oneyac # A-IPA65R190C7XKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(Max) ±20V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Drain-Source Voltage (Vdss) 650V
    Power dissipation (maximum) 30W(Tc)
    Current at 25°C-Continuous Drain (Id) 8A(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    Input capacitance (Ciss) (maximum) at different Vds 1150pF @ 400V
    Package/Enclosure TO-220-3 whole package
    Gate charge at different VGS (QG) (maximum) 23nC @ 10V
    technology MOSFET (metal oxide)
    On resistance at different Id and Vgs (maximum) 190 milliohm @ 5.7a, 10V
    Vgs(th) (maximum) when different Id 4V @ 290uA
    fet type n channel
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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