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Power MOSFET BSS223PW H6327 SC-70,SOT-323

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    MPN BSS223PWH6327XTSA1
    Other # BSS223PW H6327
    Mfr. Infineon
    Oneyac # A-BSS223PWH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : SC-70,SOT-323

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 390mA(Ta)
    FET type P channel
    Vgs (maximum value) ±12V
    On resistance at different Id and Vgs (maximum value) 1.2 ohms @ 390mA, 4.5V
    Vgs (th) (maximum value) for different IDs 1.2V @ 1.5uA
    Input capacitance (Ciss) at different Vds (maximum value) 56pF @ 15V
    Gate charge (Qg) at different Vgs (maximum value) 0.62nC @ 4.5V
    Power dissipation (maximum value) 250mW(Ta)
    Package/Enclosure SC-70,SOT-323
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 20V
    Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
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