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Power MOSFET BSS192P H6327 TO-243AA

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    MPN BSS192PH6327FTSA1
    Other # BSS192P H6327
    Mfr. Infineon
    Oneyac # A-BSS192PH6327FTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-243AA

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 190mA(Ta)
    FET type P channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 12 ohms @ 190mA, 10V
    Vgs (th) (maximum value) for different IDs 2V @ 130uA
    Input capacitance (Ciss) at different Vds (maximum value) 104pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 6.1nC @ 10V
    Power dissipation (maximum value) 1W(Ta)
    Package/Enclosure TO-243AA
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 250V
    Drive voltage (maximum RdsOn, minimum RdsOn) 2.8V,10V
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