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Power Mosfet BSS316N H6327 TO-236-3,SC-59,SOT-23-3

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    MPN BSS316NH6327XTSA1
    Other # BSS316N H6327
    Mfr. Infineon
    Oneyac # A-BSS316NH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Power dissipation (maximum) 500mW(Ta)
    Drain-Source Voltage (Vdss) 30V
    Operating temperature -55°C ~ 150°C(TJ)
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    technology MOSFET (metal oxide)
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 2V @ 3.7uA
    On resistance at different Id and Vgs (maximum) 160 milliohm @ 1.4A, 10V
    Current at 25°C-Continuous Drain (Id) 1.4A(Ta)
    Gate charge at different VGS (QG) (maximum) 0.6nC @ 5V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    Input capacitance (Ciss) (maximum) at different Vds 94pF @ 15V
    fet type n channel
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