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Power Mosfet BSC0501NSI 8-PowerTDFN

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    MPN BSC0501NSIATMA1
    Other # BSC0501NSI
    Mfr. Infineon
    Oneyac # A-BSC0501NSIATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate charge at different VGS (QG) (maximum) 33nC @ 10V
    FET function Schottky diode (body)
    Package/Enclosure 8-PowerTDFN
    Drain-Source Voltage (Vdss) 30V
    technology MOSFET (metal oxide)
    Vgs(Max) ±20V
    Operating temperature -55°C ~ 150°C(TJ)
    Power dissipation (maximum) 2.5W(Ta),50W(Tc)
    Current at 25°C-Continuous Drain (Id) 29A(Ta),100A(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    Input capacitance (Ciss) (maximum) at different Vds 2200pF @ 15V
    On resistance at different Id and Vgs (maximum) 1.9 milliohm @ 30a, 10V
    fet type n channel
    Vgs(th) (maximum) when different Id 2V @ 250uA
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