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Power MOSFET N channels 8-PowerTDFN -55°C ~ 150°C(TJ)

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MPN BSC052N03LSATMA1
Other # BSC052N03LS
Mfr. Infineon
Oneyac # A-BSC052N03LSATMA1
Supplier Oneyac
Unleaded/RoHs Details in the datasheet
Description MOSFET N-CH 30V 17A/57A TDSON

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Current at 25 ° C - Continuous Drain (Id) 17A(Ta),57A(Tc)
FET type N channels
Vgs (maximum value) ±20V
On resistance at different Id and Vgs (maximum value) 5.2 milliohms @ 30A, 10V
Vgs (th) (maximum value) for different IDs 2V @ 250uA
Input capacitance (Ciss) at different Vds (maximum value) 770pF @ 15V
Gate charge (Qg) at different Vgs (maximum value) 12nC @ 10V
Power dissipation (maximum value) 2.5W(Ta),28W(Tc)
Package/Enclosure 8-PowerTDFN
working temperature -55°C ~ 150°C(TJ)
technology MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 30V
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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