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Power MOSFET BSC042NE7NS3 G 8-PowerTDFN

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    MPN BSC042NE7NS3GATMA1
    Other # BSC042NE7NS3 G
    Mfr. Infineon
    Oneyac # A-BSC042NE7NS3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    fet type n channel
    Power dissipation (maximum) 2.5W(Ta),125W(Tc)
    technology MOSFET (metal oxide)
    Vgs(Max) ±20V
    Gate charge at different VGS (QG) (maximum) 69nC @ 10V
    Input capacitance (Ciss) (maximum) at different Vds 4800pF @ 37.5V
    Vgs(th) (maximum) when different Id 3.8V @ 91uA
    Package/Enclosure 8-PowerTDFN
    Current at 25°C-Continuous Drain (Id) 19A(Ta),100A(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    Drain-Source Voltage (Vdss) 75V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    On resistance at different Id and Vgs (maximum) 4.2 milliohm @ 50a, 10V
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