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IGBT transistor AIHD10N60RF TO-252-3, DPak (2 leads+tab), SC-63

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    MPN AIHD10N60RFATMA1
    Other # AIHD10N60RF
    Mfr. Infineon
    Oneyac # A-AIHD10N60RFATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Td (on/off) value at 25 ° C 12ns/168ns
    IGBT type Trench type field cutoff
    Vce (on) (maximum value) at different Vge and Ic 2.5V @ 15V,10A
    Power - maximum value 150W
    Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
    working temperature -40°C ~ 175°C(TJ)
    Switching energy 190uJ (on), 160uJ (off)
    Gate charge 64nC
    Test conditions 400V, 10A, 26 ohms, 15V
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 20A
    Current collector pulse (Icm) 30A
    Input type standard
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    100: $1.1758
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