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IGBT transistor AIHD06N60RF TO-252-3, DPak (2 leads+tab), SC-63

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    MPN AIHD06N60RFATMA1
    Other # AIHD06N60RF
    Mfr. Infineon
    Oneyac # A-AIHD06N60RFATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Td (on/off) value at 25 ° C 8ns/105ns
    IGBT type Trench type field cutoff
    Vce (on) (maximum value) at different Vge and Ic 2.5V @ 15V,6A
    Power - maximum value 100W
    Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
    working temperature -40°C ~ 175°C(TJ)
    Switching energy 90uJ (on), 90uJ (off)
    Gate charge 48nC
    Test conditions 400V, 6A, 23 ohms, 15V
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 12A
    Current collector pulse (Icm) 18A
    Input type standard
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    MPQ 2,500 ETD HK Contact Us
    Min. 1 Mult. 1

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