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IGBT transistor AIHD04N60RF TO-252-3, DPak (2 leads+tab), SC-63

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    MPN AIHD04N60RFATMA1
    Other # AIHD04N60RF
    Mfr. Infineon
    Oneyac # A-AIHD04N60RFATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Td (on/off) value at 25 ° C 12ns/116ns
    IGBT type Trench type field cutoff
    Vce (on) (maximum value) at different Vge and Ic 2.5V @ 15V,4A
    Power - maximum value 75W
    Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
    working temperature -40°C ~ 175°C(TJ)
    Switching energy 60uJ (on), 50uJ (off)
    Gate charge 27nC
    Test conditions 400V, 4A, 43 ohms, 15V
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 8A
    Current collector pulse (Icm) 12A
    Input type standard
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