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IGBT transistor TO220

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    MPN AOT15B60D
    Mfr. AOS
    Authorized Distributor
    Oneyac # A-AOT15B60D
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO220

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 30A
    Pulse current collector (Icm) 60A
    Vce (on) at different Vge and Ic 1.8V @ 15V, 15A
    Power Rating 167W
    Switching energy 420 µ J (on), 110 µ J (off)
    Input type standard
    Td (on/off) value at 25 ° C 21ns/73ns
    Test conditions 400V, 15A, 20 ohms, 15V
    Reverse recovery time (trr) 196ns
    working temperature -55°C ~ 175°C(TJ)
    Turn off switch energy 0.11mJ
    Closing time 83ns
    Packaging type Pipe
    install THT
    Package/Enclosure TO220
    Turn on switch energy 0.42mJ
    Opening time 40ns
    FET type IGBT
    Gate emitter voltage ±20V
    consume power 83.3W
    Pulse collector current 60A
    Collector emitter voltage 600V
    collector-emitter saturation voltage 1.6V
    Collector current 15A
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