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Power MOSFET IGP10N60T TO-220-3

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    MPN IGP10N60TXKSA1
    Other # IGP10N60T
    Mfr. Infineon
    Oneyac # A-IGP10N60TXKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Td (on/off) value at 25 ° C 12ns/215ns
    IGBT type NPT, Trench type field cutoff
    Vce (on) (maximum value) at different Vge and Ic 2.05V @ 15V,10A
    Power - maximum value 110W
    Package/Enclosure TO-220-3
    working temperature -40°C ~ 175°C(TJ)
    Switching energy 430uJ
    Gate charge 62nC
    Test conditions 400V, 10A, 23 ohms, 15V
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 20A
    Current collector pulse (Icm) 30A
    Input type standard
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    A : Please rest assured that the products sold in the Oneyac mall are all original and genuine products. We are the authorized dealer of electronic components of well-known brands both at home and abroad, and we guarantee the quality from the source.

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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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