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IGBT Transistor TO220

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    MPN AOT10B60D
    Mfr. AOS
    Authorized Distributor
    Oneyac # A-AOT10B60D
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO220

    Specifications FAQ

    Description Details Operation
    Product Category IGBT Transistor
    Pulsed collector current 40A
    Operating temperature -55°C ~ 175°C(TJ)
    Voltage-Collector-emitter breakdown (maximum) 600V
    Collector-emitter saturation voltage 1.53V
    fet type IGBT
    Input type standard
    Switching off energy 0.07mJ
    Gate-emitter voltage ±20V
    Reverse Recovery Time (trr) 105ns
    Collector current 10A
    Td (on / off) value at 25 ℃ 10ns/72ns
    Closing time 80.8ns
    Package/Enclosure TO220
    Pulse Current-Collector (Icm) 40A
    installation THT
    Test Conditions 400V, 10A, 30 Ohms, 15V
    Current-Collector (Ic) (Max) 20A
    Switch on energy 0.26mJ
    opening time 25ns
    Collector-emitter voltage 600V
    Power consumption 82W
    Power Rating 163W
    Switching energy 260µj (on), 70µj (off)
    type of packaging tube
    Vce (on) at different Vge, Ic 1.8V @ 15V,10A
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