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IGBT transistor TO220

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    MPN AOT10B60D
    Mfr. AOS
    Authorized Distributor
    Oneyac # A-AOT10B60D
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO220

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 20A
    Pulse current collector (Icm) 40A
    Vce (on) at different Vge and Ic 1.8V @ 15V,10A
    Power Rating 163W
    Switching energy 260 µ J (on), 70 µ J (off)
    Input type standard
    Td (on/off) value at 25 ° C 10ns/72ns
    Test conditions 400V, 10A, 30 ohms, 15V
    Reverse recovery time (trr) 105ns
    working temperature -55°C ~ 175°C(TJ)
    Turn off switch energy 0.07mJ
    Closing time 80.8ns
    Packaging type Pipe
    install THT
    Package/Enclosure TO220
    Turn on switch energy 0.26mJ
    Opening time 25ns
    FET type IGBT
    Gate emitter voltage ±20V
    consume power 82W
    Pulse collector current 40A
    Collector emitter voltage 600V
    collector-emitter saturation voltage 1.53V
    Collector current 10A
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