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Power MOSFET PQFN(3x3)

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    MPN IRLHM630TRPBF
    Mfr. Infineon
    Oneyac # A3-IRLHM630TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 20 V 37 W 41 nC SMT HexFet Power Mosfet - PQFN 3.3 x 3.3 mm

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1.1V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 62nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 3170pF @ 25V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,10V
    Vgs (th) at different IDs (maximum value) 1.1V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 62nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 3170pF @ 25V
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 4.5V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Package/Enclosure PQFN(3x3)
    Number of channels 1Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 40A
    Rds On(Max)@Id,Vgs 3.5mΩ
    Gate voltage Vgs 12V
    QG gate charge 41nC
    to configure Single
    Pd power dissipation (Max) 2.7W
    height 1.05mm
    length 3.3mm
    FET type N-Channel
    width 3.3mm
    Forward transconductance - minimum value 140S
    Descent time 43ns
    rise time 32ns
    Typical shutdown delay time 65ns
    Typical connection delay time 9.1ns
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