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Power Mosfet D2PAK

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    MPN IRFS3306TRLPBF
    Mfr. Infineon
    Oneyac # A3-IRFS3306TRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 60 V 230 W 85 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Typical off delay time 40ns
    Series HEXFET®
    Gate voltage Vgs 20V
    Drain-source voltage Vds 60V
    Qg-gate charge 85nC
    fet type N-Channel
    Operating temperature -55°C~175°C(TJ)
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    width 9.25mm
    length 10mm
    Fall time 77ns
    Vgs (th) (maximum) at different Ids 4V @ 150µA
    Pd-power dissipation (Max) 230W
    Input capacitance (Ciss) at different Vds (maximum) 4520pF @ 50V
    Gate Charge (Qg) at Different Vgs (Maximum) 120nC @ 10V
    height 4.4mm
    Rds On(Max)@Id,Vgs 3.3mΩ
    Gate Charge (Qg) at Different Vgs (Maximum) 120nC @ 10V
    Vgs (th) (maximum) at different Ids 4V @ 150µA
    Typical on-delay time 15ns
    Input capacitance (Ciss) at different Vds (maximum) 4520pF @ 50V
    Package/Enclosure D2PAK
    Rise Time 76ns
    Number of channels 1Channel
    Continuous Drain Current Id 160A
    Configuration Single
    Forward Transconductance-Minimum 230S
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