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Power MOSFET D2PAK

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    MPN IRFS3607TRLPBF
    Mfr. Infineon
    Oneyac # A3-IRFS3607TRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 75 V 9 mOhm 84 nC 140 W Silicon SMT Mosfet - TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 84nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3070pF @ 50V
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 84nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3070pF @ 50V
    Package/Enclosure D2PAK
    Number of channels 1Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 80A
    Rds On(Max)@Id,Vgs 7.34mΩ
    Gate voltage Vgs 20V
    QG gate charge 56nC
    to configure Single
    Pd power dissipation (Max) 140W
    height 4.4mm
    length 10mm
    FET type N-Channel
    width 9.25mm
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