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Power Mosfet TO-220AB

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    MPN IRF630NPBF
    Mfr. Infineon
    Oneyac # A3-IRF630NPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Series HEXFET®
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 35nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum) 575pF @ 25V
    Operating temperature -55°C~175°C(TJ)
    Package/Enclosure TO-220AB
    Number of channels 1Channel
    Drain-source voltage Vds 200V
    Continuous Drain Current Id 9.3A
    Rds On(Max)@Id,Vgs 300mΩ
    Gate voltage Vgs 20V
    Qg-gate charge 23.3nC
    Configuration Single
    Pd-power dissipation (Max) 82W
    height 15.65mm
    length 10mm
    fet type N-Channel
    width 4.4mm
    Forward Transconductance-Minimum 4.9S
    Fall time 15ns
    Rise Time 14ns
    Typical off delay time 27ns
    Typical on-delay time 7.9ns
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    In Stock :  0 Lead Time:14W

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