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Power MOSFET 

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    MPN IRFSL3206PBF
    Mfr. Infineon
    Oneyac # A-IRFSL3206PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    working temperature -55°C~175°C(TJ)
    Gate charge (Qg) at different Vgs (maximum value) 170nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 6540pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 50V
    Continuous drain current Id 210A
    Rds On(Max)@Id,Vgs 3mΩ
    Transistor configuration single
    pin number 3
    category Power MOSFET
    Pd power dissipation (Max) 300W
    Typical shutdown delay time 55 ns
    Typical connection delay time 19 ns
    Transistor material Si
    height 9.65mm
    Series HEXFET
    width 4.83mm
    length 10.67mm
    Forward transconductance 210S
    Forward diode voltage 1.3V
    Number of components per chip 1 Ohms
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