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Power MOSFET TO-262

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    MPN IRFSL3207ZPBF
    Mfr. Infineon
    Oneyac # A-IRFSL3207ZPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 75 V 300 W 120 nC Hexfet Power Mosfet Through Hole - TO-262-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 300W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 170nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 6920pF @ 50V
    Rds On(Max)@Id,Vgs 4.1mΩ@75A,10V
    FET type N-Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 170A
    Gate charge (Qg) at different Vgs (maximum value) 170nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 6920pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 50V
    Package/Enclosure TO-262
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