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Power MOSFET IPI032N06N3GAKSA1

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    MPN IPI032N06N3 G
    Other # IPI032N06N3GAKSA1
    Mfr. Infineon
    Oneyac # A-IPI032N06N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 118µA
    Gate charge (Qg) at different Vgs (maximum value) 165nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 13000pF @ 30V
    working temperature -55°C~175°C(TJ)
    Number of channels 1Channel
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 2.3mΩ
    Gate voltage Vgs 20V
    QG gate charge 165nC
    to configure Single
    Pd power dissipation (Max) 188W
    height 9.45mm
    length 10.2mm
    Series OptiMOS3
    FET type N-Channel
    width 4.5mm
    Forward transconductance - minimum value 75S
    Descent time 20ns
    rise time 120ns
    Typical shutdown delay time 62ns
    Typical connection delay time 35ns
    Drain source voltage Vds 60V
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