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Power MOSFET PQFN(5x6)

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    MPN IRFH5302TRPBF
    Mfr. Infineon
    Oneyac # A-IRFH5302TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 30 V 3.6 W 29 nC SMT HexFet Power Mosfet - PQFN 5 x 6 mm

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.35V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 76nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 4400pF @ 15V
    Pd power dissipation (Max) 3.6W(Ta),100W(Tc)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.35V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 76nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4400pF @ 15V
    Rds On(Max)@Id,Vgs 2.1mΩ@50A,10V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 32A
    Package/Enclosure PQFN(5x6)
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    In Stock :  0 Lead Time:14W

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