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Power MOSFET PQFN(5x6)

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    MPN IRFH5215TRPBF
    Mfr. Infineon
    Oneyac # A-IRFH5215TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    150V, 27A, 0.058 ohms, PQFN 5X6 HEXFET Power MOSFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 5V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 32nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1350pF @ 50V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 32nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1350pF @ 50V
    Pd power dissipation (Max) 3.6W(Ta),104W(Tc)
    Rds On(Max)@Id,Vgs 58mΩ@16A,10V
    FET type N-Channel
    Drain source voltage Vds 150V
    Continuous drain current Id 5A
    Package/Enclosure PQFN(5x6)
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 50V
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