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Power MOSFET 

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    MPN IRFH7107TRPBF
    Mfr. Infineon
    Oneyac # A-IRFH7107TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 100µA
    working temperature -55°C~150°C(TJ)
    Gate charge (Qg) at different Vgs (maximum value) 72nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3110pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Continuous drain current Id 75A
    Rds On(Max)@Id,Vgs 8.5mΩ
    Minimum gate threshold voltage 2V
    Transistor configuration single
    pin number 8
    category Power MOSFET
    Pd power dissipation (Max) 104W
    Forward transconductance 68S
    Number of components per chip 1 Ohms
    Forward diode voltage 1.3V
    Series HEXFET
    height 1.17mm
    Transistor material Si
    Typical shutdown delay time 20 ns
    Typical connection delay time 9.1 ns
    width 5mm
    length 5.85mm
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