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Power MOSFET 

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    MPN IRFB3306GPBF
    Mfr. Infineon
    Oneyac # A-IRFB3306GPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4520pF @ 50V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 160A
    Rds On(Max)@Id,Vgs 4.2mΩ
    Minimum gate threshold voltage 2V
    pin number 3
    Transistor configuration single
    category Power MOSFET
    Pd power dissipation (Max) 230W
    height 16.51mm
    Number of components per chip 1 Ohms
    width 4.83mm
    Series HEXFET
    Transistor material Si
    Typical shutdown delay time 40 ns
    Typical connection delay time 15 ns
    length 10.67mm
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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