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Power Mosfet TO-220AB

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    MPN IRFB3307PBF
    Mfr. Infineon
    Oneyac # A-IRFB3307PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Input capacitance (Ciss) at different Vds (maximum) 5150pF @ 50V
    Gate Charge (Qg) at Different Vgs (Maximum) 180nC @ 10V
    Pd-power dissipation (Max) 200W(Tc)
    Drain-source voltage Vds 75V
    Gate Charge (Qg) at Different Vgs (Maximum) 180nC @ 10V
    Gate voltage Vgs ±20V
    Continuous Drain Current Id 120A
    fet type N-Channel
    Series HEXFET®
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Vgs (th) (maximum) at different Ids 4V @ 150µA
    Vgs (th) (maximum) at different Ids 4V @ 150µA
    Rds On(Max)@Id,Vgs 6.3mΩ@75A,10V
    Input capacitance (Ciss) at different Vds (maximum) 5150pF @ 50V
    Package/Enclosure TO-220AB
    Operating temperature -55°C~175°C(TJ)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    In Stock :  0 Lead Time:14W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 1,000 ETD HK Contact Us
    Min. 1 Mult. 1

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