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Power MOSFET TO-220AB

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    MPN IRFB3306PBF
    Mfr. Infineon
    Oneyac # A-IRFB3306PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 60 V 230 W 85 nC Hexfet Power Mosfet Flange Mount - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4520pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 230W(Tc)
    Rds On(Max)@Id,Vgs 4.2mΩ@75A,10V
    working temperature -55°C~175°C(TJ)
    FET type N-Channel
    Continuous drain current Id 160A
    Drain source voltage Vds 60V
    Gate charge (Qg) at different Vgs (maximum value) 120nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4520pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 50V
    Package/Enclosure TO-220AB
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    In Stock :  0 Lead Time:14W

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