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Power MOSFET 8-SO

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    MPN IRF8313TRPBF
    Mfr. Infineon
    Oneyac # A-IRF8313TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual N-Channel 30 V 21.6 mOhm 9 nC 2 W Silicon SMT Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.35V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 9nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 760pF @ 15V
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 15.5mΩ@9.7A,10V
    Vgs (th) at different IDs (maximum value) 2.35V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 9nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 760pF @ 15V
    Pd power dissipation (Max) 2W
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 9.7A
    Package/Enclosure 8-SO
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