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Power MOSFET 8-SO

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    MPN IRF7907TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7907TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-SO

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.35V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 10nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 850pF @ 15V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 16.4mΩ@9.1A,10V
    Vgs (th) at different IDs (maximum value) 2.35V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 10nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 850pF @ 15V
    Pd power dissipation (Max) 2W
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 9.1A,11A
    Package/Enclosure 8-SO
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    In Stock :  0 Lead Time:14W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 4,000 ETD HK Contact Us
    Min. 1 Mult. 1

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