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Power MOSFET 

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    MPN IRF8707GTRPBF
    Mfr. Infineon
    Oneyac # A-IRF8707GTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.35V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 9.3nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 760pF @ 15V
    working temperature -55°C~150°C(TJ)
    Continuous drain current Id 11A
    Rds On(Max)@Id,Vgs 17.5mΩ
    Minimum gate threshold voltage 1.35V
    Transistor configuration single
    pin number 8
    category Power MOSFET
    Pd power dissipation (Max) 2.5W
    Series HEXFET
    height 1.50mm
    Transistor material Si
    Typical shutdown delay time 7.3 ns
    Typical connection delay time 6.7 ns
    width 4mm
    Number of components per chip 1 Ohms
    length 5mm
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