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Power MOSFET 8-SO

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    MPN IRF7853TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7853TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-SO

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4.9V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 39nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1640pF @ 25V
    Pd power dissipation (Max) 2.5W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4.9V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 39nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1640pF @ 25V
    Rds On(Max)@Id,Vgs 18mΩ@8.3A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 8.3A
    Package/Enclosure 8-SO
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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    In Stock :  0 Lead Time:14W

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