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Power Mosfet 8-SO

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    MPN IRF7853TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7853TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-SO

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Pd-power dissipation (Max) 2.5W(Ta)
    Rds On(Max)@Id,Vgs 18mΩ@8.3A,10V
    Voltage, coupled to gate charge (Qg) (max) @ Vgs 10V
    Gate Charge (Qg) at Different Vgs (Maximum) 39nC @ 10V
    Series HEXFET®
    Gate voltage Vgs ±20V
    Gate Charge (Qg) at Different Vgs (Maximum) 39nC @ 10V
    Operating temperature -55°C~150°C(TJ)
    Input capacitance (Ciss) at different Vds (maximum) 1640pF @ 25V
    Vgs (th) (maximum) at different Ids 4.9V @ 100µA
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Voltage, coupled to input capacitance (Ciss) (max) @ Vds 25V
    Package/Enclosure 8-SO
    Continuous Drain Current Id 8.3A
    Input capacitance (Ciss) at different Vds (maximum) 1640pF @ 25V
    Drain-source voltage Vds 100V
    fet type N-Channel
    Vgs (th) (maximum) at different Ids 4.9V @ 100µA
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    In Stock :  0 Lead Time:14W

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    Min. 1 Mult. 1

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