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Power Mosfet 8-SO

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    MPN IRF7241TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7241TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 40 V 2.5 W 53 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate Charge (Qg) at Different Vgs (Maximum) 80nC @ 10V
    Vgs (th) (maximum) at different Ids 3V @ 250µA
    Drain-source voltage Vds 40V
    Gate voltage Vgs ±20V
    fet type P-Channel
    Gate Charge (Qg) at Different Vgs (Maximum) 80nC @ 10V
    Package/Enclosure 8-SO
    Continuous Drain Current Id 6.2A
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Input capacitance (Ciss) at different Vds (maximum) 3220pF @ 25V
    Rds On(Max)@Id,Vgs 41mΩ@6.2A,10V
    Operating temperature -55°C~150°C(TJ)
    Vgs (th) (maximum) at different Ids 3V @ 250µA
    Input capacitance (Ciss) at different Vds (maximum) 3220pF @ 25V
    Series HEXFET®
    Pd-power dissipation (Max) 2.5W(Ta)
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