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Power Mosfet 8-SO

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    MPN IRF7306TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7306TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual P-Channel 30 V 0.16 Ohm 25 nC 2 W Generation V SMT Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate Charge (Qg) at Different Vgs (Maximum) 25nC @ 10V
    Rds On(Max)@Id,Vgs 100mΩ@1.8A,10V
    Vgs (th) (maximum) at different Ids 1V @ 250µA
    Vgs (th) (maximum) at different Ids 1V @ 250µA
    Drain-source voltage Vds 30V
    Gate Charge (Qg) at Different Vgs (Maximum) 25nC @ 10V
    Operating temperature -55°C~150°C(TJ)
    Input capacitance (Ciss) at different Vds (maximum) 440pF @ 25V
    Continuous Drain Current Id 3.6A
    Package/Enclosure 8-SO
    Series HEXFET®
    Input capacitance (Ciss) at different Vds (maximum) 440pF @ 25V
    Pd-power dissipation (Max) 2W
    fet type P-Channel
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    Min. 1 Mult. 1

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