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Universal MOSFET 8-HSOP

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    MPN RS1G201ATTB1
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RS1G201ATTB1
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-HSOP

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    working temperature -55°C~150°C(TJ)
    technology MOSFET (Metal Oxide)
    FET type P channel
    Leakage source voltage (Vdss) 40V
    Input capacitance (Ciss) at different Vds (maximum value) 6890pF @ 20V
    Package/Enclosure 8-HSOP
    Current at 25 ° C - Continuous Drain (Id) 20A(Ta),78A(Tc)
    Vgs (th) (maximum value) for different IDs 2.5V @ 1mA
    Power dissipation (maximum value) 3W(Ta),40W(Tc)
    What is the gate charge at different Vgs? (Qg) (maximum value) 130nC @ 10V
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 5.2 milliohms @ 20A, 10V
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