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Power MOSFET MG-WDSON-5

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    MPN IRF6717MTRPBF
    Mfr. Infineon
    Oneyac # A-IRF6717MTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : MG-WDSON-5

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 25V
    Continuous drain current Id 38A(Ta),200A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.35V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 69nC @ 4.5V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 6750pF @ 13V
    Pd power dissipation (Max) 2.8W(Ta),96W(Tc)
    Rds On(Max)@Id,Vgs 1.25mΩ@38A,10V
    working temperature -40°C~150°C(TJ)
    Package/Enclosure MG-WDSON-5
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    When unpacking without original label and tray!
    MPQ 4,800 ETD HK Contact Us
    Min. 1 Mult. 1

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