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Power MOSFET BSB008NE2LX 3-WDSON

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    MPN BSB008NE2LXXUMA1
    Other # BSB008NE2LX
    Mfr. Infineon
    Oneyac # A-BSB008NE2LXXUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 3-WDSON

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 46A(Ta),180A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 0.8 milliohms @ 30A, 10V
    Vgs (th) (maximum value) for different IDs 2V @ 250uA
    Input capacitance (Ciss) at different Vds (maximum value) 16000pF @ 12V
    Gate charge (Qg) at different Vgs (maximum value) 343nC @ 10V
    Power dissipation (maximum value) 2.8W(Ta),89W(Tc)
    Package/Enclosure 3-WDSON
    working temperature -40°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 25V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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