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Power MOSFETs ±20V 2.2W(Ta),42W(Tc) -40°C~150°C(TJ) 62mΩ@5A,10V N-Channel 100V 4.2A DIRECTFET™ SH

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MPN IRF6655TRPBF
Mfr. Infineon
Oneyac # A-IRF6655TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description IRF6655 Series 100 V 2.2 W 8.7 nC N-Channel Power Mosfet Surface Mount-DirectFET

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Gate voltage Vgs ±20V
Pd power dissipation (Max) 2.2W(Ta),42W(Tc)
working temperature -40°C~150°C(TJ)
Rds On(Max)@Id,Vgs 62mΩ@5A,10V
FET type N-Channel
Drain source voltage Vds 100V
Continuous drain current Id 4.2A
Package/Enclosure DIRECTFET™ SH
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