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Power Mosfet D2PAK

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    MPN IRF1010NSTRLPBF
    Mfr. Infineon
    Oneyac # A-IRF1010NSTRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 55 V 11 mOhm 120 nC 180 W Surface Mount Mosfet - TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    fet type N-Channel
    Gate Charge (Qg) at Different Vgs (Maximum) 120nC @ 10V
    Operating temperature -55°C~175°C(TJ)
    Drain-source voltage Vds 55V
    Pd-power dissipation (Max) 180W(Tc)
    Package/Enclosure D2PAK
    Input capacitance (Ciss) at different Vds (maximum) 3210pF @ 25V
    Rds On(Max)@Id,Vgs 11mΩ@43A,10V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Continuous Drain Current Id 85A
    Gate voltage Vgs ±20V
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum) 3210pF @ 25V
    Series HEXFET®
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