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Power Mosfet TO-220AB

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    MPN IRF1104PBF
    Mfr. Infineon
    Oneyac # A-IRF1104PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Input capacitance (Ciss) at different Vds (maximum) 2900pF @ 25V
    Continuous Drain Current Id 100A
    Gate voltage Vgs ±20V
    Pd-power dissipation (Max) 170W(Tc)
    Rds On(Max)@Id,Vgs 9mΩ@60A,10V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 93nC @ 10V
    Drain-source voltage Vds 40V
    Operating temperature -55°C~175°C(TJ)
    Package/Enclosure TO-220AB
    Gate Charge (Qg) at Different Vgs (Maximum) 93nC @ 10V
    fet type N-Channel
    Input capacitance (Ciss) at different Vds (maximum) 2900pF @ 25V
    Series HEXFET®
    Drive voltage @Rds On (Max), Rds On (Min) 10V
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    In Stock :  0 Lead Time:14W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 1,000 ETD HK Contact Us
    Min. 1 Mult. 1

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