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Power MOSFET D2PAK

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    MPN STB60NF06LT4
    Mfr. STMicro
    Oneyac # A-STB60NF06LT4
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    MOSFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series STB
    height 4.6 mm
    length 10.4 mm
    width 9.35 mm
    to configure Single
    Descent time 30 ns
    Typical connection delay time 35 ns
    rise time 220 ns
    Number of channels 1 Channel
    Typical shutdown delay time 55 ns
    Forward transconductance - minimum value 20 S
    Drive voltage @ Rds On (Max), Rds On (Min) 5V,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 66nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 2000pF @ 25V
    Gate voltage Vgs ±15V
    Pd power dissipation (Max) 110W(Tc)
    Rds On(Max)@Id,Vgs 14mΩ@30A,10V
    working temperature -65°C~175°C(TJ)
    Package/Enclosure D2PAK
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 60A
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