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Power MOSFET IPB029N06N3GATMA1

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    MPN IPB029N06N3 G
    Other # IPB029N06N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB029N06N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Typical shutdown delay time 62 ns
    Part number alias IPB029N06N3GATMA1 IPB029N06N3GXT SP000453052
    to configure Single
    Number of channels 1Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 2.3mΩ
    Gate voltage Vgs 20V
    QG gate charge 165nC
    Pd power dissipation (Max) 188W
    height 4.4mm
    length 10mm
    Series OptiMOS3
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 75S
    Descent time 20ns
    rise time 120ns
    Typical connection delay time 35ns
    working temperature -55°C~175°C
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