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Power MOSFET IPB025N10N3GATMA1

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    MPN IPB025N10N3 G
    Other # IPB025N10N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB025N10N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 14800pF @ 50V
    working temperature -55°C~175°C(TJ)
    Drain source voltage Vds 100V
    Drive voltage @ Rds On (Max), Rds On (Min) 6V,10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 275µA
    Gate charge (Qg) at different Vgs (maximum value) 206nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 180A
    Rds On(Max)@Id,Vgs 2mΩ
    Gate voltage Vgs 20V
    QG gate charge 206nC
    to configure Single
    Pd power dissipation (Max) 300W
    height 4.4mm
    length 10mm
    Series OptiMOS3
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 100S
    Descent time 28ns
    rise time 58ns
    Typical shutdown delay time 84ns
    Typical connection delay time 34ns
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