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Power MOSFET IPB037N06N3GATMA1 TO-263-3

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    MPN IPB037N06N3 G
    Other # IPB037N06N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB037N06N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3 Series : OptiMOS3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 90A
    Rds On(Max)@Id,Vgs 3.7mΩ@90A,10V
    Gate voltage Vgs ±20V
    QG gate charge 98nC
    to configure Single
    Pd power dissipation (Max) 188W
    height 4.4mm
    length 10mm
    Series OptiMOS3
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 61S
    Descent time 5ns
    rise time 70ns
    Typical shutdown delay time 40ns
    Typical connection delay time 30ns
    working temperature -55°C~175°C
    Package/Enclosure TO-263-3
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